? ? ? ? ? ? epoxy: ul94-v0 rated flame retardant case : molded plastic, terminals : solder plated, solderable per mil-std-750, method 2026 polarity : indicated by cathode band mounting position : any weight : 0.05 gram do-214ac / sma approximated *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =1.0a f batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. high current capability. lead-free parts meet environmental standards of mil-std-19500 /228 high surge capability. glass passivated chip junction. ? suffix "-h" indicates halogen-free parts, ex. fm4001g-h. ? ? ? ? ? ? parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature see fig.2 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 1.0 30 5.0 +175 -65 50 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 15 50 junction to case 28 r jc fm4001g FM4002G fm4003g 35 70 140 50 100 200 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 v f (v) *4 fm4004g fm4005g 280 420 400 600 1.10 -55 to +150 fm4006g fm4007g 800 1000 560 700 50 100 200 400 600 800 1000 1.0a surface mount general purpose rectifiers - 50v-1000v (c) o operating temperature t, j 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. sma package outline dimensions in inches and (millimeters) fm4001g thru fm4007g page 1/2 @ 2010 copyright by american first semiconductor chip silicon rectifier features mechanical data maximum ratings (at t =25 o c unless otherwise noted)
.1 1.0 10 100 rating and characteristic curves fig.3 - typical reverse characteristics reverse leakage current , ( a) percentage rated peak reverse voltage 0 20 40 60 80 100 120 140 .01 fig.2-typical forward current derating curve average for ward current ,(a) t =100 c j t =25 c j fig.4-maximum non-repetitive forward surge current 0.2 0 0.4 0.6 0.8 1.0 1.2 ambient temperature ( c) single phase half wave 60hz resistive or inductive load 0.1 1.0 .01 10 50 fig.1-typical forward characteristics instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle .6 .7 .8 .9 1.0 1.1 1.2 1.3 3.0 t =25 c j fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) 35 30 25 20 15 10 5 0 .01 .05 .1 .5 1 5 10 50 100 peak for waard surge current ,(a) 10 0 20 30 40 50 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method 0 20 40 60 80 100 120 140 160 180 200 fm4001g thru fm4007g page 2/2 www.first-semi.com
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